features trenchfet power mosfet new low thermal resistance powerpak package dual mosfet for space savings 100% r g tested high threshold voltage at high temperature SI7964DP vishay siliconix new product document number: 73101 s-42058?rev. b, 15-nov-04 www.vishay.com 1 dual n-channel 60-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) q g (typ) 60 0.023 @ v gs = 10 v 9.6 43 1 2 3 4 5 6 7 8 s1 g1 s2 g2 d1 d1 d2 d2 6.15 mm 5.15 mm bottom view powerpak so-8 ordering information: SI7964DP-t1?e3 n-channel mosfet g 1 d 1 s 1 n-channel mosfet g 2 d 2 s 2 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 60 v gate-source v oltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 9.6 6.1 continuous drain current (t j = 150 c) a t a = 70 c i d 7.7 4.9 pulsed drain current i dm 40 a continuous source current (diode conduction) a i s 2.9 1.2 single avalanche current l = 0.1 mh i as 25 single avalanche energy e as 31 mj maximum power dissipation a t a = 25 c p d 3.5 1.4 w maximum power dissipation a t a = 70 c p d 2.2 0.9 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 26 35 maximum junction-to-ambient a steady state r thja 60 85 c/w maximum junction-to-case (drain) steady state r thjc 2.2 2.7 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI7964DP vishay siliconix new product www.vishay.com 2 document number: 73101 s-42058?rev. b, 15-nov-04 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 3.4 4.5 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain-source on-s tate resistance a r ds(on) v gs = 10 v, i d = 9.6 a 0.019 0.023 forward t ransconductance a g fs v ds = 15 v, i d = 9.6 a 30 s diode forward voltage a v sd i s = 2.9 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 43 65 gate-source charge q gs v ds = 30 v, v gs = 10 v, i d = 9.6 a 15 nc gate-drain charge q gd ds gs d 8.5 gate resostamce r g f = 1 mhz 1 2 3 turn-on delay time t d(on) 20 30 rise time t r v dd = 20 v, r l = 20 15 25 turn-off delay time t d(off) v dd = 20 v , r l = 20 i d 1 a, v gen = 10 v, r g = 6 50 75 ns fall time t f g 15 25 source-drain reverse recovery time t rr i f = 2.9 a, di/dt = 100 a/ s 35 60 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (25 c unless noted) 0 8 16 24 32 40 01234567 0 8 16 24 32 40 012345 v gs = 10 thru 7 v t c = 125 c ? 55 c 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 5 v 6 v
SI7964DP vishay siliconix new product document number: 73101 s-42058?rev. b, 15-nov-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 5 10 15 20 25 30 35 40 ? on-resistance ( r ds(on) ) 0 800 1600 2400 3200 4000 0 102030405060 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 1020304050 v ds ? drain-to-source voltage (v) c rss c oss c iss v ds = 30 v i d = 9.6 a i d ? drain current (a) v gs = 10 v i d = 9.6 a v gs = 10 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) 0.0 0.3 0.6 0.9 1.2 1.5 0.00 0.01 0.02 0.03 0.04 0.05 0246810 t j = 150 c t j = 25 c 40 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s i d = 9.6 a r ds(on) ? on-resiistance (normalized)
SI7964DP vishay siliconix new product www.vishay.com 4 document number: 73101 s-42058?rev. b, 15-nov-04 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 0 60 100 20 40 power (w) single pulse power time (sec) 80 ? 1.6 ? 1.2 ? 0.8 ? 0.4 ? 0.0 0.4 0.8 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold voltage variance (v) v gs(th) t j ? temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 60 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 100 600 0.01 0.001 1 10 safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse ? drain current (a) i d 0.1 i dm limited i d(on) limited *r ds(on) limited bv dss limited 0.1 p(t) = 10 dc p(t) = 1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001 p(t) = 0.1 v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified
SI7964DP vishay siliconix new product document number: 73101 s-42058?rev. b, 15-nov-04 www.vishay.com 5 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 10 ? 1 10 ? 4 1 2 1 0.1 0.01 0.2 0.1 0.05 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effe ctive transient thermal impedance 0.02 vishay siliconix maintains worldw ide manufacturing capability. pr oducts may be manufactured at on e of several q ualified locati ons. reliability data fo r silicon te chnology and package reliability represent a co mposite of all qualifie d locations. for relate d documents such as pa ckage/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?73101 .
|
